| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive capable of polishing a surface to be polished such as a surface of an SiO<SB>2</SB>insulation film at a high speed without causing scratches, to provide a method of polishing a substrate, and to provide a method of manufacturing a semiconductor device. <P>SOLUTION: The abrasive contains a slurry in which cerium oxide particles are dispersed in a medium. The cerium oxide particles comprise cerium oxide particles formed of two or more crystallites and having crystal grain boundaries, and the crystallite sizes are 10-600 nm. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
