| 摘要 |
A method for fabricating a capacitor of a semiconductor device includes: forming a first insulation layer over a substrate; forming a plug in the first insulation layer to contact the substrate; forming an etch stop layer and a second insulation layer over a resultant structure obtained after forming the plug; etching the second insulation layer to expose a portion of the etch stop layer; oxidizing the exposed portion of the etch stop layer; removing the oxidized portion of the etch stop layer by a wet cleaning process to form a contact hole exposing the plug; and forming a storage node over the contact hole.
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