发明名称 |
Vertical gallium nitride based light emitting diode |
摘要 |
A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
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申请公布号 |
US2007114564(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20060602285 |
申请日期 |
2006.11.21 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE SU Y.;KIM DONG W.;CHOI SEOK B.;KIM TAE J. |
分类号 |
H01L33/06;H01L33/20;H01L33/32;H01L33/38 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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