| 摘要 |
Disclosed relates to a memory device fabricated in a simplified structure excluding a switch element and a storing element and providing non-volatile storage and read of data. The memory device in accordance with the present invention comprises: a substrate; a plurality of lower electrodes established in parallel with each other on the substrate; a ferroelectric layer provided on the lower electrodes; and a plurality of upper electrodes arranged in parallel with each other and in an orthogonal direction to the lower electrodes on the ferroelectric layer. |
