发明名称 ULTRATOUGH CVD SINGLE CRYSTAL DIAMOND AND THREE DIMENSIONAL GROWTH THEREOF
摘要 The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m<SUP>1/2</SUP>.<SUP/>The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m<SUP>1/2</SUP>.<SUP/>The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
申请公布号 WO2007018555(B1) 申请公布日期 2007.05.24
申请号 WO2005US32199 申请日期 2005.09.09
申请人 CARNEGIE INSTITUTION OF WASHINGTON;HEMLEY, RUSSELL, J.;MAO, HO-KWANG;YAN, CHIH-SHIUE 发明人 HEMLEY, RUSSELL, J.;MAO, HO-KWANG;YAN, CHIH-SHIUE
分类号 C01B31/06;C30B25/00;C30B29/04 主分类号 C01B31/06
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