ULTRATOUGH CVD SINGLE CRYSTAL DIAMOND AND THREE DIMENSIONAL GROWTH THEREOF
摘要
The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m<SUP>1/2</SUP>.<SUP/>The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m<SUP>1/2</SUP>.<SUP/>The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
申请公布号
WO2007018555(B1)
申请公布日期
2007.05.24
申请号
WO2005US32199
申请日期
2005.09.09
申请人
CARNEGIE INSTITUTION OF WASHINGTON;HEMLEY, RUSSELL, J.;MAO, HO-KWANG;YAN, CHIH-SHIUE