| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device with less fluctuation and excellent data separation characteristic by equalizing increase in wiring resistance due to one electrode wiring or the other electrode wiring within a memory cell array, and by keeping constant the effective voltage applied to a storage material during the read operation, write operation, and erase operation for the desired cells within the memory cell array. <P>SOLUTION: The semiconductor storage device of the cross-point structure comprises a plurality of one electrode wires extending in the same direction, a plurality of the other electrode wires crossing one electrode wires, and a storage material for accumulating data at the cross-points of one electrode wires and the other electrode wires. A sum of the wire resistance value of one electrode wires up to the desired cross-point and the wire resistance value of the other electrode wires up to the relevant point is substantially equal between the desired cross-points. <P>COPYRIGHT: (C)2007,JPO&INPIT |
