PLASMA TREATMENT METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To precisely and quickly treat compound semiconductor materials containing gallium and indium. SOLUTION: The mixed gas of argon and iodation methane is introduced from a gas feeder 2 to a vacuum container 1, and gas is exhausted by a turbo molecular pump 3 as a ventilator, and while a pressure in the vacuum container 1 is maintained as a predetermined pressure, a high frequency power of 100 MHz is supplied to an antenna 5 by a high frequency power source 4 for an antenna so that plasma can be generated in the vacuum container 1, and the etching of a compound semiconductor thin film containing gallium and indium formed on a substrate 7 placed on a substrate electrode 6 is carried out. COPYRIGHT: (C)2007,JPO&INPIT