| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that the ununiformity of dark current is caused because a light shielding film is arranged under a protection film in an optical black area. SOLUTION: The solid-state imaging device is provided with a semiconductor member 101 wherein a light receiving part 102 is formed, a protection film 108 having hydrogen supply capability which is arranged above the semiconductor member 101, and at least two metal layers 105 and 107 which are arranged between the semiconductor member 101 and the protection film 108. The respective metal layers 105 and 107 between them are made to have nearly the same density of a pattern in an optical black area 400 as that of a pattern in an effective pixel area 300. COPYRIGHT: (C)2007,JPO&INPIT
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