发明名称 Deposition on charge sensitive materials with ion beam deposition
摘要 A method is described that involves applying a first voltage to a first mesh located above a wafer. The wafer has a charge sensitive material exposed thereon. The method also involves applying a second voltage to a second mesh located above the wafer. The method also involves depositing a layer of material by ion beam deposition onto the charge sensitive material while the voltages are applied to their respective meshes.
申请公布号 US2007114123(A1) 申请公布日期 2007.05.24
申请号 US20050285222 申请日期 2005.11.21
申请人 BENDER JEFFREY 发明人 BENDER JEFFREY
分类号 C23C14/00 主分类号 C23C14/00
代理机构 代理人
主权项
地址