| 摘要 |
A flash memory device and method of manufacturing the same. The flash memory device includes a semiconductor substrate in which a first region where a cell region is formed, a second region where a peripheral region is formed, and a third region formed in the peripheral region at the boundary portion of the cell region and the peripheral region. The device also includes a triple well region formed in the first region and a predetermined region of the third region, an isolation film formed in the first region and having a first depth, an isolation film formed in the second region and having a second depth, which is deeper than the first depth of the isolation film, and a gate oxide film for low voltage and a floating gate, which are stacked on a predetermined region of the first region, a gate oxide film and a gate, which are stacked on a predetermined region of the second region. Additionally, the device includes a dummy flash memory cell in which the floating gate formed in the first region and the gate formed in the second region are separated from each other, and a gate oxide film for high voltage and a gate electrode are stacked on a predetermined region of the third region.
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