THIN FILM TRANSISTOR INCLUDING A LIGHTLY DOPED AMORPHOUS SILICON CHANNEL LAYER

摘要

A thin film transistor (TFT) is provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Source/drain regions are formed over the channel layer.