| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of avalanche photodiode that can manufacture a guard-ring structure, using the simplified processes. <P>SOLUTION: A diffusion control layer 24 is provided to a part of an aperture 28 of a diffusing mask 26 in a process of form p-n junction with diffusion. Zn is diffused into a window layer 20 via the diffusion mask to simultaneously form a photosensitive portion and the guard ring. When diffusion coefficients are almost equal in the diffusion control layer and window layer, thickness corresponding to the thickness of diffusion control layer simply becomes equal to the difference in depth at the diffusion front. <P>COPYRIGHT: (C)2007,JPO&INPIT |
