发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
There is provided a method in which a TFT with superior electrical characteristics is manufactured and a high performance semiconductor device is realized by assembling a circuit with the TFT. The method of manufacturing the semiconductor device includes: a step of forming a crystal-containing semiconductor film by carrying out a thermal annealing to a semiconductor film; a step of carrying out an oxidizing treatment to the crystal-containing semiconductor film; a step of carrying out a laser annealing treatment to the crystal-containing semiconductor film after the oxidizing treatment has been carried out; and a step of carrying out a furnace annealing treatment to the crystal-containing semiconductor film after the laser annealing. The laser annealing treatment is carried out with an energy density of 250 to 5000 mJ/cm<SUP>2</SUP>.
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申请公布号 |
US2007117293(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20070653951 |
申请日期 |
2007.01.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI;TAKANO TAMAE;YAMAZAKI SHUNPEI |
分类号 |
H01L21/84;G02F1/1362;H01L21/20;H01L21/268;H01L21/336;H01L29/786;H01L31/113 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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