发明名称 |
VERTICAL DIODE DOPED WITH ANTIMONY TO AVOID OR LIMIT DOPANT DIFFUSION |
摘要 |
Use of antimony as an n-type conductivity-enhancing dopant in semiconductor structures having a vertical dopant profile is described. Dopants tend to diffuse, and steep dopant gradients can be difficult to maintain. Specifically, when a silicon layer is doped with phosphorus or arsenic, both n-type dopants, dopant atoms tend to seek the surface as undoped silicon is deposited on top of the n- doped layer, rising through the undoped silicon during deposition. Antimony does not have this tendency, and also diffuses more slowly than either phosphorus or arsenic, and this is advantageously used to dope such structures. |
申请公布号 |
WO2007058845(A2) |
申请公布日期 |
2007.05.24 |
申请号 |
WO2006US43482 |
申请日期 |
2006.11.08 |
申请人 |
SANDISK 3D LLC;KUMAR, TANMAY;HERNER, S., BRAD |
发明人 |
KUMAR, TANMAY;HERNER, S., BRAD |
分类号 |
H01L29/861;H01L21/329;H01L21/84;H01L27/102;H01L27/12;H01L29/167;H01L29/868 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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