HALBLEITERWAFER UND VERFAHREN ZU DESSEN HERSTELLUNG

摘要

In a semiconductor wafer (W) having a periphery thereof chamfered, and having at least a main surface side thereof subjected to mirror finishing, an inclined surface (21) is formed on the periphery of the wafer, such that has an angle (&thetas;) of inclination of the inclined surface (21) with respect to a main surface (10) is not smaller than 5 DEG and not larger than 25 DEG , and at the same time a length (L) of the same in the radial direction of the wafer is 100 mu m or longer. Further, the inclined surface is configured to have a non-mirror-finished portion (21b) toward the periphery of the wafer.