发明名称 |
Thermal chemical vapor deposition of silicon nitride |
摘要 |
<p>Apparatus comprising a processing region, a substrate support, a gas delivery system, a gas mixing region, a heating element positioned to heat an adapter ring fastened to a face plate to a desired temperature, and a temperature controlled exhaust system. Also, a method and apparatus for vaporizing bis(tertiary-butylamino)silane, flowing the bis(tertiary-butylamino)silane and ammonia into a processing chamber, combining the two reactants having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, and flowing the bis(tertiary-butylamino)silane through a gas distribution plate into a processing region.</p> |
申请公布号 |
EP1788118(A2) |
申请公布日期 |
2007.05.23 |
申请号 |
EP20070003193 |
申请日期 |
2004.08.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
IYER, R. SURYANARAYANAN;SEUTTER, SEAN M.;SMITH, JACOB W.;DIBELLO, GREGORY W.;TAM, ALEXANDER;TRAN, BINH;TANDON, SANJEEV |
分类号 |
C23C16/34;C23C16/00;C23C16/44;C23C16/455 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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