发明名称 |
A reference cell scheme for MRAM |
摘要 |
<p>An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.</p> |
申请公布号 |
EP1788576(A2) |
申请公布日期 |
2007.05.23 |
申请号 |
EP20060392014 |
申请日期 |
2006.11.07 |
申请人 |
MAGIC TECHNOLOGIES INC.;APPLIED SPINTRONICS, INC. |
发明人 |
HSU KAI YANG;PO-KANG WANG;XIZENG SHI |
分类号 |
G11C7/14;G11C11/15;G11C11/16 |
主分类号 |
G11C7/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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