发明名称 Method for manufacturing a bonded substrate
摘要 <p>A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlapping a first semiconductor substrate serving as an active layer onto a second semiconductor substrate serving as a support substrate via an oxide film or without an oxide film; the active layer is formed by forming a thin film from the first semiconductor substrate; and the surface of the active layer is flattened by vapor-phase etching. After forming a thin film from the first semiconductor substrate and before flattening the surface of the active layer by the vapor-phase etching, an organic substance adhering to the surface of the active layer is removed and a native oxide film generated on the surface of the active layer is removed after removing the organic substance.</p>
申请公布号 EP1788621(A2) 申请公布日期 2007.05.23
申请号 EP20060022406 申请日期 2006.10.26
申请人 SUMCO CORPORATION 发明人 ENDO, AKIHIKO;KUSABA, TATSUMI
分类号 H01L21/762;B08B3/08;H01L21/02;H01L21/3065 主分类号 H01L21/762
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