发明名称 |
Method for manufacturing a bonded substrate |
摘要 |
<p>A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlapping a first semiconductor substrate serving as an active layer onto a second semiconductor substrate serving as a support substrate via an oxide film or without an oxide film; the active layer is formed by forming a thin film from the first semiconductor substrate; and the surface of the active layer is flattened by vapor-phase etching. After forming a thin film from the first semiconductor substrate and before flattening the surface of the active layer by the vapor-phase etching, an organic substance adhering to the surface of the active layer is removed and a native oxide film generated on the surface of the active layer is removed after removing the organic substance.</p> |
申请公布号 |
EP1788621(A2) |
申请公布日期 |
2007.05.23 |
申请号 |
EP20060022406 |
申请日期 |
2006.10.26 |
申请人 |
SUMCO CORPORATION |
发明人 |
ENDO, AKIHIKO;KUSABA, TATSUMI |
分类号 |
H01L21/762;B08B3/08;H01L21/02;H01L21/3065 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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