发明名称 Stacked semiconductor memory device
摘要 The stacked semiconductor memory device of the present invention has the object of reducing the cost of developing a wide variety of memory devices and includes: a memory cell array chip that is equipped with memory cell arrays, an interface chip that is stacked with the memory cell array chip and that is provided with a memory configuration switching circuit for changing the input/output bit configuration of the memory cell arrays, and a plurality of interchip wires for connecting the memory cell array chip and the interface chip.
申请公布号 US7221614(B2) 申请公布日期 2007.05.22
申请号 US20050151220 申请日期 2005.06.14
申请人 ELPIDA MEMORY, INC. 发明人 SAITO HIDEAKI;HAGIHARA YASUHIKO;FUKAISHI MUNEO;MIZUNO MASAYUKI;IKEDA HIROAKI;SHIBATA KAYOKO
分类号 G11C5/00;G11C5/02;G11C5/06;H01L21/20;H01L27/108;H01L29/76;H01L29/94;H01L31/119 主分类号 G11C5/00
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