发明名称 |
Stacked semiconductor memory device |
摘要 |
The stacked semiconductor memory device of the present invention has the object of reducing the cost of developing a wide variety of memory devices and includes: a memory cell array chip that is equipped with memory cell arrays, an interface chip that is stacked with the memory cell array chip and that is provided with a memory configuration switching circuit for changing the input/output bit configuration of the memory cell arrays, and a plurality of interchip wires for connecting the memory cell array chip and the interface chip.
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申请公布号 |
US7221614(B2) |
申请公布日期 |
2007.05.22 |
申请号 |
US20050151220 |
申请日期 |
2005.06.14 |
申请人 |
ELPIDA MEMORY, INC. |
发明人 |
SAITO HIDEAKI;HAGIHARA YASUHIKO;FUKAISHI MUNEO;MIZUNO MASAYUKI;IKEDA HIROAKI;SHIBATA KAYOKO |
分类号 |
G11C5/00;G11C5/02;G11C5/06;H01L21/20;H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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