Pressure-contact type semiconductor device

摘要

A gate electrode ( 1 a) is formed on the outer peripheral step portion ( 1 ') of a semiconductor substrate ( 1 ) so as to face a pressure-contact supporting block ( 6 ), and a convex contacting portion ( 1 g) is formed on a predetermined position on the surface of the gate electrode to contact the pressure contact supporting block. The surface area of the gate electrode ranging from the inner periphery to a position adjacent to the convex contacting portion, is coated with an insulation film ( 1 d). The convex contacting portion ( 1 g) is formed of a convex portion integral with the gate electrode or formed of another gate electrode ( 1 a').