发明名称 Method of inspecting a mask or reticle for detecting a defect, and mask or reticle inspection system
摘要 A method of inspecting a mask or reticle, the mask or reticle being provided with a pattern to be transferred onto a semiconductor wafer, the pattern having a defect, includes the step of creating a plurality of logical zones and uniquely associating each of said logical zones with a surface area of said pattern. Then, an inspection rule representing a characteristic sensitivity for detecting a defect is associated with each of said logical zones. An image of said pattern is then recorded and compared with a reference image of an ideal pattern for locating a defect within said pattern. One of said logical zones is then identified with said located defect and that inspection rule which is associated with said identified logical zone is retrieved from a memory. The inspection rule is then applied to a characteristic of said defect for determining, whether said defect is to be repaired. A signal can be issued in response to said determination.
申请公布号 US7221788(B2) 申请公布日期 2007.05.22
申请号 US20030611067 申请日期 2003.07.01
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHULZE STEFFEN;HAFFNER HENNING
分类号 G06K9/00;G01N21/956;G06T7/00;G09F1/00;H01L21/66 主分类号 G06K9/00
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