| 摘要 |
The semiconductor device of the present invention includes a column decoder (select and write circuit), which selects multiple pages that are not located adjacently to each other so as to simultaneously program multiple bits in the memory cells of the selected page, when the multiple bits are programmed in the multiple pages. The page is a selection unit and is composed of a given number of the memory cells located on a same word line. An unnecessary stress of programming is not applied to the memory cells that are not to be programmed, by increasing the distance between the memory cells to be programmed simultaneously.
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