发明名称 |
Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
摘要 |
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1 an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2 an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3 an Al layer as a high-reflection electrode, {circle around (4 a Ti layer having a barrier function, and {circle around (5 an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
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申请公布号 |
US7221002(B2) |
申请公布日期 |
2007.05.22 |
申请号 |
US20040958911 |
申请日期 |
2004.10.04 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKAZAKI HARUHIKO;SUGAWARA HIDETO |
分类号 |
H01L21/28;H01L29/22;H01L33/06;H01L33/10;H01L33/32;H01L33/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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