发明名称 Semiconductor device and semiconductor memory using the same
摘要 A cell transistor includes source/drain regions formed at a lower level than part of its channel region. A select transistor has a channel region and source/drain regions formed at substantially the same level as the source/drain regions of the cell transistor. One of the source/drain regions of the cell transistor and one of the source/drain regions of the select transistor are electrically interconnected to each other in substantially the same plane.
申请公布号 US7221029(B2) 申请公布日期 2007.05.22
申请号 US20050236629 申请日期 2005.09.28
申请人 INNOTECH CORPORATION 发明人 MIIDA TAKASHI
分类号 G11C16/04;H01L29/76;G11C16/02;G11C16/06;H01L21/8238;H01L21/8247;H01L27/092;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/04
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