| 发明名称 |
Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory |
| 摘要 |
A NAND flash memory structure and method of making a flash memory structure with shielding in the bitline direction as well as in wordline and diagonal directions from Yupin effect errors and from disturbs.
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| 申请公布号 |
US7221008(B2) |
申请公布日期 |
2007.05.22 |
| 申请号 |
US20030680665 |
申请日期 |
2003.10.06 |
| 申请人 |
SANDISK CORPORATION |
发明人 |
MATAMIS GEORGE;PHAM TUAN;CHIEN HENRY;FANG HAO |
| 分类号 |
H01L29/80;G11C11/34;G11C16/04;H01L21/336;H01L21/8247;H01L27/115;H01L29/76;H01L31/062;H01L31/112;H01L31/119 |
主分类号 |
H01L29/80 |
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