发明名称 Device-level address translation within a programmable non-volatile memory device
摘要 A programmable non-volatile memory device includes block switching logic that enables device-level translation rules to be changed. The device-level translation rules map the external addresses received by the flash memory device to the internal addresses of the programmable non-volatile memory device. Because the device-level translation rules are changeable, the physical location in the programmable non-volatile memory device to which an external address maps can be changed in a manner that is transparent to off-device operations. By allowing device-level translation rules to be changed, block management functions can be accomplished within the programmable non-volatile memory device itself.
申请公布号 US7222214(B2) 申请公布日期 2007.05.22
申请号 US20050090594 申请日期 2005.03.25
申请人 LUCENT TECHNOLOGIES INC. 发明人 BELEVICH ARTEM;BALAKRISHNAN THIRUMALPATHY
分类号 G06F12/00;G06F11/00;G06F12/02;G06F12/08;G06F15/14;G11C8/00 主分类号 G06F12/00
代理机构 代理人
主权项
地址