| 发明名称 |
Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
| 摘要 |
Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.
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| 申请公布号 |
US7220658(B2) |
申请公布日期 |
2007.05.22 |
| 申请号 |
US20050537644 |
申请日期 |
2005.06.06 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE & TECH AGENCY |
发明人 |
HASKELL BENJAMIN A;CRAVEN MICHAEL D.;FINI PAUL T.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
H01L21/20;C30B25/02;H01L21/205 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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