| 摘要 |
A semiconductor apparatus is provided which makes it possible to reduce the number of control terminals required for switching through paths of a high frequency signal, simplify the circuit configuration for controlling the terminals, improve an isolation characteristic between on path and off path of a through FET, and obtain a sufficiently high isolation. In this semiconductor apparatus, one specific through FET and each of shunt FETs connected to each of through FETs other than the one specific through FET are simultaneously turned on in response to the same control signal inputted to the same control terminal. Thus, when a high frequency signal leaks from an output terminal to the signal path of the through FET having been turned on, through the signal paths of the through FETs having been turned off, the high frequency signal can be released to GND through the shunt FET having been turned on.
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