Semiconductor laser and process for manufacturing the same

摘要

This specification relates to a semiconductor laser in which an n-type semiconductor layer ( 13 ), an active layer ( 101 ), and a p-type semiconductor layer ( 24 ) are stacked in this order on a substrate ( 11 ), the active layer ( 101 ) comprising a well layer composed of InGaN, the semiconductor laser comprising an intermediate layer ( 21 ) sandwiched between the active layer ( 101 ) and the p-type semiconductor layer ( 24 ), and the intermediate layer including no intentionally added impurities and being composed of a gallium nitride-based compound semiconductor. This semiconductor laser has an extended lifetime under high optical output power conditions.