发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD |
摘要 |
<p>There is a method of manufacturing a semiconductor device with a dual gate field effect transistor, the method including a semiconductor body a semiconductor material having a surface with a source region and a drain region of a first conductivity type and with a channel region of a second conductivity type opposite to the first conductivity type between the source region and the drain region and with a first gate region separated from the surface of the semiconductor body by a first gate dielectric above the channel region and with a second gate region situated opposite to the first gate region and formed within a recess in an opposite surface of the semiconductor body so as to be separated from the channel region by a second gate dielectric wherein the recess is formed with a local change of the doping of the channel region and by etching starting from the opposite surface of the semiconductor body.</p> |
申请公布号 |
KR20070052339(A) |
申请公布日期 |
2007.05.21 |
申请号 |
KR20077007520 |
申请日期 |
2007.04.02 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
SURDEANU RADU;HIJZEN ERWIN;IN'T ZANDT MICHAEL A. A.;HUETING RAYMOND J. E. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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