发明名称 |
NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABRICATION |
摘要 |
<p>A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.</p> |
申请公布号 |
KR20070052337(A) |
申请公布日期 |
2007.05.21 |
申请号 |
KR20077007396 |
申请日期 |
2007.03.30 |
申请人 |
INTEL CORP. |
发明人 |
SHAH UDAY;DOYLE BRIAN;BRASK JUSTIN;CHAU ROBERT;LETSON THOMAS |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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