| 摘要 |
<p>[PROBLEMS] To provide a process for producing an indium nanowire and an electroconductive oxide nanowire, which are applicable, for example, to electroconductive fillers and nanowiring of various transparent electroconductive films and are in the form of a wire having an average thickness of not more than 500 nm and a ratio of the average length to the average thickness (aspect ratio) of not less than 30, in a simple and cost-effective manner, and an indium nanowire and an electroconductive oxide nanowire produced by the process. [MEANS FOR SOLVING PROBLEMS] A process for producing an indium nanowire, characterized in that particles composed mainly of indium subhalide are disproportionately reacted in a nonaqueous solvent to produce a nanowire composed mainly of metallic indium. The electroconductive oxide nanowire can be produced by thermally oxidizing the above indium nanowire further doped with a doping metal, or by doping an indium oxide nanowire, produced from the indium nanowire, with an oxide of a doping metal.</p> |
