AMORPHOUS OXIDE FIELD-EFFECT TRANSISTOR HAVING CRYSTALLINE REGION AT THE SEMICONDUCTOR/DIELECTRIC INTERFACE

摘要

Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.