SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

To divide a semiconductor wafer (1W) by stealth dicing, the wafer (1W) is so placed that the pad (1LBt) for testing in a cut region (CR) and the alignment target (Am) are located along one side of the width direction of the cut region (CR), and a laser beam for forming a processed region (PR) is applied to a place horizontally far from the pad (1LBt) and the alignment target (Am). With this, defective cut shape can be reduced or prevented in cutting a semiconductor wafer by stealth dicing.