| 摘要 |
<p>A semiconductor device is provided with a silicon substrate; a P channel type field effect transistor having a first gate insulating film on the silicon substrate, a first gate electrode on the first gate insulating film and a first source/drain region; and an N channel type field effect transistor having a second gate insulating film on the silicon substrate, a second gate electrode on the second gate insulating film and a second source/drain region. The entire first gate electrode is formed of silicide of a metal (M), and at least on an upper section including the upper plane of the second gate electrode, a silicide region of the same kind as the metal (M) is provided. The concentration of the metal (M) in the silicide region is lower than that of the metal (M) of the silicide of the first gate electrode, and furthermore, on the upper section including the upper plane of the second gate electrode, a barrier layer region, which includes a metal diffusion suppressing element at a concentration higher than that in the lower section, is provided.</p> |
