Power semiconductor module

摘要

Power semiconductor module (10) comprises a substrate; power semiconductor component(s); and a composite film (14) having a logic metal layer (26), a power metal layer (28), an insulating film, and contact nubs. Feedthrough holes (32) are provided between the logic and power metal layers. The plastic film defines a recess in the region of each hole that is free of the logic metal layer. A flexible segment of a thin wire extends through the region that is free of the logic metal layer and through the recess and is bonded to bonding sites at each logic metal layer and power metal layer.