发明名称
摘要 <p>A mask read only memory containing diodes and method of manufacturing the same. The mask read only memory is a high-density three dimensional array formed by stacking a plurality of diode layers and the logic“0”or“1”is defined by whether there is a dielectric layer on the diode.</p>
申请公布号 JP3914904(B2) 申请公布日期 2007.05.16
申请号 JP20030291168 申请日期 2003.08.11
申请人 发明人
分类号 H01L27/10;H01L21/329;H01L21/822;H01L27/06;H01L27/102;H01L27/112;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L27/10
代理机构 代理人
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