Method of fabricating first and second separate active semiconductor zones and use for the fabrication of CMOS structures.

摘要

Two active zones are produced on a front face of a support, by forming first active zones (1a-c) with sidewalls covered by a thin protective layer, on a front face (5a) of an insulating thin layer (3); patterning the protective layer (9) to free interface regions in the sidewalls (8a-c) of the active zones; intercalating patterns made of second semi-conducting material in polycrystalline and/or amorphous form; depositing a passivation layer on the first zone and patterns; and crystallizing the second material in monocrystalline form. Production of two active zones on a front face of a support, involves: (A) formation, on the front face of electrically insulating thin layer, of the first active zones with at least side walls covered by a thin protective layer; (B) patterning of the protective layer to free interface regions in the side walls of first active zones; (C) intercalation between the first active zones, on the front face of the insulating thin layer, of patterns made of second semi-conducting material in polycrystalline and/or amorphous form; (D) deposition of a passivation layer on the first active zones and the patterns; and (E) crystallization of the second semi-conducting material in monocrystalline form to form the second active zones. Each pattern comprises at least a part of a side wall in direct contact with an interface region of an adjacent first active zone and a front face disposed in the same plane as the front faces of the first active zones. The zones are formed by two monocrystalline semi-conducting materials that are distinct from one another and comprising coplanar front faces. The support is formed by stacking of a substrate (4) and of an electrically insulating thin layer. A front face of the insulating thin layer constitutes the front face of the support. The first material is germanium or a silicon and germanium alloy. The zones are made of silicon or germanium. An independent claim is included for use of the above method for fabrication of complementary metal oxide semiconductor structures.