| 摘要 |
A method of fabricating a self-aligned bipolar junction transistor in a semiconductor structure having a first layer of silicon carbide generally having a first conductivity type and a second layer of silicon carbide generally having a second conductivity type, opposite to the first conductivity type. The method comprises forming a pillar in the second silicon carbide layer, the pillar having a side wall and defining an adjacent horizontal surface on the second layer, forming an oxide layer having a predetermined thickness on the second semiconductor layer, including the side wall and the horizontal surface. After formation of the oxide layer, the oxide layer on a portion of the horizontal surface adjacent the side wall is anisotropically etched while at least a portion of the oxide layer remains on the side wall, thereby exposing a portion of the horizontal surface. A portion of the second layer below the exposed portion of the horizontal surface is then doped with a dopant of the first conductivity type to create a doped well region in the second layer which is spaced from the side wall by a distance defined by the thickness of the oxide layer. Resulting devices are likewise disclosed. |
