METHOD FOR FORMING TRENCH USING HIGH SELECTIVITY HARD MASK AND METHOD FOR ISOLATION OF SEMICONDUCTOR DEVICE USNIG THE SAME,申请号KR20050108315-传众专利搜索

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发明名称	METHOD FOR FORMING TRENCH USING HIGH SELECTIVITY HARD MASK AND METHOD FOR ISOLATION OF SEMICONDUCTOR DEVICE USNIG THE SAME
摘要
申请公布号	KR20070050737(A)	申请公布日期	2007.05.16
申请号	KR20050108315	申请日期	2005.11.12
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KIM, MYUNG OK
分类号	H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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