发明名称 |
Metal oxide semiconductor thin film and method of producing the same |
摘要 |
An organometal having as molecular structural elements both a semiconductor anion atom and cation atom is applied to a substrate and reacted under heating to obtain p-type and n-type metal oxide semiconductor thin films whose p-n junctions enable fabrication of a semiconductor device, light-emitting element or solar cell. |
申请公布号 |
EP1324398(A3) |
申请公布日期 |
2007.05.16 |
申请号 |
EP20020258551 |
申请日期 |
2002.12.11 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
IWATA, KAKUYA |
分类号 |
H01L21/365;H01L31/18;H01L21/16;H01L21/368;H01L31/0296;H01L31/04;H01L33/28 |
主分类号 |
H01L21/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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