Acceleration sensor, has projection that limits deflection of seismic mass under effect of acceleration force in direction and is formed at seismic mass and/or crystal substrate, where epitaxy layer is applied on front side of substrate

摘要

The sensor has a seismic mass (14) connected with a silicon-crystal substrate (1) using a bar (13). A projection (10) limits a deflection of the seismic mass under effect of acceleration force in a direction. The projection is formed at the seismic mass and/or the crystal substrate. A rear trench runs from the rear side of the crystal substrate to a cavity (5) that lies under the bar. An epitaxy layer is applied on the front side of the crystal substrate. An independent claim is also included for a method for manufacturing an acceleration sensor.