发明名称 High temperature electrostatic chuck
摘要 <p>An electrostatic chuck for use in a plasma chamber where etching or deposition processes are carried out on semiconductor wafers is composed of a chuck body (56) with an electrode (60) to clamp a wafer (30) electrostatically and a heat transfer body (58). A plenum (80) is established between surfaces of the chuck body (56) and the heat transfer body (58). An expansion joint (64) attaches the chuck and heat transfer bodies together and accommodate differential thermal expansion thereof while maintaining a seal during thermal cycles. <IMAGE></p>
申请公布号 EP1111661(B1) 申请公布日期 2007.05.16
申请号 EP20000311471 申请日期 2000.12.20
申请人 LAM RESEARCH CORPORATION 发明人 SEXTON, GREG;KENNARD, MARK ALLEN;SCHOEPP, ALAN
分类号 C23C14/50;H01L21/00;C23C16/458;H01L21/205;H01L21/302;H01L21/3065;H01L21/68;H01L21/683 主分类号 C23C14/50
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