NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

A method of fabricating a phase-change random-access memory (RAM) device includes forming a chalcogenide material on a substrate. A bottom contact is formed under the chalcogenide material, the bottom contact comprising TiAlN. Forming the bottom contact includes performing an atomic layer deposition (ALD) process, the ALD process including introducing an NH₃ source gas into a chamber in which the ALD process is being carried out, a flow amount of the NH₃ gas being such that the resulting bottom contact has a chlorine content of less than 1 at %. The bottom contact can include TiAlN having a crystallinity in terms of full-width half-maximum (FWHM) of less than about 0.65 degree.