| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process parameter creating method that can obtain a desired pattern. Ž<P>SOLUTION: The method has a step to prepare a parameter group containing a plurality of process parameters, a step to obtain a second pattern by correcting the first parameters on the basis of the parameter group, a step to forecast a third pattern to be formed on a semiconductor substrate by etching on the basis of the parameter group and the second parameters, a step to obtain an evaluation result by comparing the third pattern and the first pattern, a step to determine if the evaluation result satisfies a predetermined condition, a step, if not, to return to the step to correct the first pattern by correcting the process parameters in the parameter group, and a step, if satisfied, to decide the process parameters in the parameter group as the final process parameters. Ž<P>COPYRIGHT: (C)2004,JPO Ž</p> |
