发明名称 Method of manufacturing a material compound wafer
摘要 The invention relates to a method for manufacturing a material compound wafer by forming a predetermined splitting area in a source substrate; attaching the source substrate to a handle substrate to form an assembly; heating the assembly for weakening the predetermined splitting area; and determining a degree of weakening of the predetermined splitting area which evidences the physical strength of the predetermined splitting area during or after heating to detect anomalies that may lead to damage of the source substrate, handle or assembly. The degree of weakening is advantageously determined in-situ and may be determined continuously or periodically during the heating. The invention further relates to an apparatus for thermal annealing device used in the manufacturing process of a material compound wafer. This apparatus generally includes a device for thermally annealing the assembly described above; and a device for determining the degree of weakening of the predetermined splitting area during or after thermal annealing to detect anomalies that may lead to damage of the source substrate, handle or assembly.
申请公布号 US7217639(B2) 申请公布日期 2007.05.15
申请号 US20040004408 申请日期 2004.12.03
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A. 发明人 MAURICE THIBAUT;GUIOT ERIC
分类号 H01L21/46;H01L21/30;H01L21/66;H01L21/762 主分类号 H01L21/46
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