| 摘要 |
PURPOSE: A semiconductor fabrication method is provided to improve a yield and reduce a resistance of contact holes by easily removing WxOyCz formed on a tungsten silicide using mixed gases. CONSTITUTION: When a contact hole is to be form on a tungsten silicide, residues, such as WxOyCz are generated on the surface of the tungsten silicide, so that the resistance of the contact hole is increased. Thereby, the residues of WxOyCz are easily removed by using mixed gases of fluorine gas and nitrogen gas. The mixed gases composed of NF3/N2 or CF4/N2, and the mixed gases further include an inactive gas, such as He, Ne, and Ar.
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