METHOD FOR FORMING OPENINGS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to prevent an oxidation of metal wire due to moisture by covering side walls of openings with an oxidation layer of a low moisture-absorbing property. CONSTITUTION: A first metal wire(21) is formed on a predetermined lower layer(20) and an oxidation layer(22) is deposited to cover the first metal wire(21) for preventing damages to the first metal wire(21). A PE-SiOF layer(23) is deposited and via holes are formed by selectively etching the PE-SiOF layer(23) and the oxidation layer(22). The via holes are completely buried by depositing an oxidation layer(24) having a less moisture-absorbing property to prevent moisture absorption into the PE-SiOF layer(23), so that the oxidation of the second metal layer(25).