发明名称 |
Covert transformation of transistor properties as a circuit protection method |
摘要 |
A technique for and structures for camouflaging an integrated circuit structure. The technique includes the use of a light density dopant (LDD) region of opposite type from the active regions resulting in a transistor that is always off when standard voltages are applied to the device.
|
申请公布号 |
US7217977(B2) |
申请公布日期 |
2007.05.15 |
申请号 |
US20040828022 |
申请日期 |
2004.04.19 |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
CHOW LAP-WAI;CLARK, JR. WILLIAM M.;BAUKUS JAMES P. |
分类号 |
H01L31/062;H01L21/44;H01L21/8238;H01L27/02;H01L27/092;H01L31/113 |
主分类号 |
H01L31/062 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|