发明名称 Plasma leak monitoring method, plasma processing apparatus and plasma processing method
摘要 In a plasma processing apparatus that forms plasma from a process gas by supplying the process gas into a processing container and applying high-frequency power to an electrode provided inside the processing container on which a workpiece is placed and executes specific plasma processing on the processing surface of the workpiece, apparatus state parameter data indicating a state of the plasma processing apparatus are obtained through measurement executed by a parameter measuring instrument, optical data are obtained through measurement executed by an optical measuring instrument and electrical data are obtained through measurement executed by an electrical measuring instrument. A means for plasma leak judgment judges that a plasma leak has occurred if there is a fluctuation in the data.
申请公布号 US7217942(B2) 申请公布日期 2007.05.15
申请号 US20030644745 申请日期 2003.08.21
申请人 TOKYO ELECTRON LIMITED 发明人 TANAKA HIDEKI
分类号 C23C16/505;H01L21/00;G01J1/00;G01N21/68;G01R31/26;G01T1/24;H01J37/32;H01L21/3065;H01L21/66 主分类号 C23C16/505
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